| │principle│Q & A│トランジスタ技術12月号│応用磁気学会誌│ | |||
| MI sensor Technology |
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| Principle | |||
| (1) Key Material The MI Sensor makes use of the Giant Magneto-Impedance effect of magnetic amorphous metal wire. |
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| (2) Pulse Current Drive When pulse electric current is passed to amorphous metal wire, the wire impedance changes significantly in response to the strength of the imposed magnetic field. This phenomenon is called "Giant Magnetoimpedance Effect" |
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| (3) Micro MI element Consists of a micro-pickup coil wrapped around the amorphous metal wire. The pickup coil detects the imaginary part of the MI effect. |
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| Superior Sensing Performance |
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| (1) Extremely High Sensitivity Minute magnetic fields up to 10-6 Gauss can be detected. |
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| (2) Fast Response Frequencies up to 1MHz are possible. |
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| (3) Excellent TemperatureStability Due to high Curie temperature of the wire, temperature characteristic shows excellent stability. This is one of the strengh of MI sensor when compared to the semiconductor magnetic sensors such as hall effect sensors. |
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